AUIRFP4409 hexfet ? power mosfet d s g to-247ac g d s gate drain source features ?? advanced process technology ?? low on-resistance ?? 175c operating temperature ?? fast switching ?? repetitive avalanche allowed up to tjmax ?? lead-free, rohs compliant ?? automotive qualified * description specifically designed for automo tive applications, this hexfet ? power mosfets utilizes the late st processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device de- sign that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications . ordering information base part number package type standard pack complete part number form quantity AUIRFP4409 to-247ac tube 25 AUIRFP4409 v dss 300v r ds(on) typ. 56m ?? max 69m ?? i d 38a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 38 a i d @ t c = 100c continuous drain current, v gs @ 10v 27 i dm pulsed drain current ?? 152 p d @t c = 25c maximum power dissipation 341 w linear derating factor 2.3 w/c v gs gate-to-source voltage 20 v e as (thermally limited) single pulse avalanche energy ?? 541 ? mj t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? thermal resistance ? parameter typ. max. units r ? jc junction-to-case ?? ??? 0.44 c/w r ? cs case-to-sink, flat greased surface 0.24 ??? r ? ja junction-to-ambient ?? ??? 40 s g d ? automotive grade absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.expos ure to absolute-maximum-rated condition s for extended periods may affect device reliability. the thermal resist ance and power dissip ation ratings are measured under board mounted and still air condi- tions. ambient temperature (ta) is 25c, unless otherwise specified. 1 www.irf.com ? 2013 international rectifier july 10, 2013 hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/
2 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 300 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.24 ??? v/c reference to 25c, i d = 3.5ma r ds(on) static drain-to-source on-resistance ??? 56 69 m ?? v gs = 10v, i d = 24a ?? v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds =300 v, v gs = 0v ??? ??? 250 v ds =300v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 1.3 ??? ?? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) gfs forward transconductance 45 ??? ??? s v ds = 50v, i d =24a q g total gate charge ??? 83 125 nc ? i d = 24a q gs gate-to-source charge ??? 28 42 v ds = 150v q gd gate-to-drain charge ??? 26 39 v gs = 10v t d(on) turn-on delay time ??? 18 ??? ns v dd = 195v t r rise time ??? 23 ??? i d = 24a t d(off) turn-off delay time ??? 34 ??? r g = 2.2 ?? t f fall time ??? 20 ??? v gs = 10v c iss input capacitance ??? 5168 ??? pf ? v gs = 0v c oss output capacitance ??? 300 ??? v ds = 50v c rss reverse transfer capacitance ??? 77 ??? ? = 1.0mhz c oss eff.(er) effective output capacitance (energy related) ??? 196 ??? v gs = 0v, vds = 0v to 240v ? see fig.11 c oss eff.(tr) output capacitance (time related) ??? 265 ??? v gs = 0v, vds = 0v to 240v ? diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 40 a mosfet symbol (body diode) ? showing the i sm pulsed source current ??? ??? 160 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 24a,v gs = 0v ?? t rr reverse recovery time ??? 302 ??? ns t j = 25c v dd = 255v ??? 379 ??? t j = 125c i f = 24a, q rr reverse recovery charge ??? 1739 ??? nc t j = 25c di/dt = 100a/s ??? ??? 2497 ??? t j = 125c ? i rrm reverse recovery current ??? 13 ??? a t j = 25c ? d s g notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? recommended max eas limit, starting t j = 25c, l = 2.05mh, r g = 50 ? , i as = 24a, v gs =10v. ? i sd ?? 24a, di/dt ?? 1771a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance t hat gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 http://www.irf.com/technical-info/ app notes/an-994.pdf ? r ?? is measured at t j approximately 90c
3 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) pass ed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level to-247ac n/a esd machine model class m4 (+/- 500v) ?? aec-q101-002 human body model class h2 (+/- 4000v) ?? aec-q101-001 charged device model class c5 (+/- 2000) ?? aec-q101-005 rohs compliant yes ? qualification standards can be foun d at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage.
4 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 fig 1. typical output characteristics 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v ? 60s pulse width fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v ? 60s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 3. typical transfer characteristics fig 2. typical output characteristics -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 24a v gs = 10v 0 20 40 60 80 100 120 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v vds= 60v i d = 24a
5 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 -60 -20 20 60 100 140 180 t j , temperature ( c ) 270 280 290 300 310 320 330 340 350 360 370 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 3.5ma fig 8. maximum safe operating area -50 0 50 100 150 200 250 300 350 v ds, drain-to-source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 e n e r g y ( j ) fig 11. typical c oss stored energy fig 12. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig 9. maximum drain current vs. case temperature -75 -25 25 75 125 175 225 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 250a id = 1.0ma id = 1.0a fig 10. drain-to?source breakdown voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 7 14 21 28 35 42 i d , d r a i n c u r r e n t ( a ) fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc
6 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 fig 13. maximum effective transient thermal impedance, junction-to-case 0 200 400 600 800 1000 di f /dt (a/s) 1000 1500 2000 2500 3000 3500 q r r ( n c ) i f = 16a v r = 255v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 10 20 30 40 50 i r r m ( a ) i f = 16a v r = 255v t j = 25c t j = 125c fig 16. typical stored charge vs. dif/dt fig 17. typical stored charge vs. dif/dt fig 14. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 10 20 30 40 50 60 i r r m ( a ) i f = 24a v r = 255v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 1000 1500 2000 2500 3000 3500 4000 4500 5000 q r r ( n c ) i f = 24a v r = 255v t j = 25c t j = 125c fig 15. typical recovery current vs. dif/dt 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
7 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 fig 18. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 19a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 20a. switching time test circuit fig 21a. gate charge test circuit t p v (br)dss i as fig 19b. unclamped inductive waveforms fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 21b. gate charge waveform
8 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package outline dimensions are shown in millimeters (inches) 2x c "a" "a" e e2/ 2 q e2 2x l1 l d a e 2x b2 3x b lead tip see vi ew "b" b4 b a ? . 010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a vi ew : "b" section: c- c, d-d, e-e (b, b2, b4) (c) base meta l plati ng vi ew : "a" - "a" to-247ac part marking information to-247ac package is not recommended for surface mount application. ywwa xx ? xx date code y= year ww= work week a= automotive, leadfree aufp4409 lot code part number ir logo
9 www.irf.com ? 2013 international rectifier july 10, 2013 ? AUIRFP4409 ?????? important notice unless specifically designated for the auto motive market, international rectifier corporation and its subsidiaries (ir) re- serve the right to make corrections, modifications, enh ancements, improvements, and other changes to its products and services at any time and to discontinue any product or serv ices without notice. part num bers designated with the ?au? prefix follow automotive industry and / or customer specif ic requirements with regards to product discontinuance and process change notification. all products are sold subject to ir ?s terms and conditions of sale supplied at the time of or- der acknowledgment. ir warrants performance of its hardware products to the specific ations applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control te chniques are used to the extent ir deems necessary to sup- port this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or custom er product design. customers are responsible for their prod- ucts and applications using ir components. to minimize t he risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheet s is permissible only if reproduction is without alteration and is accompanied by all associated warr anties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documenta- tion. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any impl ied warranties for the associated ir product or service and is an unfair and de- ceptive business practice. ir is not res ponsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure o f the ir product could create a situation where personal inju ry or death may occur. s hould buyer purchase or use ir products for any such unintended or unauthorized applicati on, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distri butors harmless against all claims, costs, damages, and expens- es, and reasonable attorney fees arising out of, directly or i ndirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufac- ture of the product. only products certified as military grade by the defense lo gistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applica- tions. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s ow n risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environm ents unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the des- ignation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105
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